Fully-Depleted SOI-MOSFET Model for Circuit Simulation and its Application to 1/f Noise Analysis
نویسندگان
چکیده
We have developed a fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation by solving the potential distribution along all three important SOI-surfaces selfconsistently. Besides comparison to measured I-V data, the model is verified with 1/f noise analysis, sensitive to the carrier concentration and distribution along the channel. The carrier concentration increase, due to confinement of the silicon layer, results in enhanced 1/f noise in comparison with the bulk-MOSFET. Our results show that further reduction of the silicon-layer thickness for achieving higher driving capability will cause unavoidable enhancement of the noise.
منابع مشابه
The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs
The fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is the first model for circuit simulation based on a complete surface-potential description. HiSIM-SOI solves the surface potentials at all three SOI-surfaces perpendicular to the channel surface self-consistently. Besides verification against measured I-V characteristics, HiSIM-SOI is also verified with a 1/f noise analysis, ...
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